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CD4011 bảng dữ liệu(PDF) 2 Page - Tiger Electronic Co.,Ltd

tên linh kiện CD4011
Giải thích chi tiết về linh kiện  The CD4011 NAND gates provide the system designer with direct implementation of the NAND function
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CD4011
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
-0.5 to +20
V
VIN
DC Input Voltage (Referenced to GND)
-0.5 to V CC +0.5
V
IIN
DC Input Current, per Pin
10
mA
PD
Power Dissipation in Still Air, Plastic
DIP+
SOIC Package+
750
500
mW
PD
Power Dissipation per Output Transistor
100
mW
Tstg
Storage Temperature
-65 to +150
C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
C
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
C from 65 to 125C
SOIC Package:
- 7 mW/
C from 65to 125C
Recommended Operating Conditions
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
3.0
18
V
VIN, VOUT
DC Input Voltage, Output Voltage (Referenced to GND)
0
CC
V
V
TA
Operating Temperature, All Package Types
-55
+125
C
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages
to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND (VIN or
VOUT) VCC .
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC). Unused outputs
must be left open.
2


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