STC9204 datasheet(2/7 Pages) SAMHOP

tên linh kiện	STC9204

Giải thích chi tiết về linh kiện	Dual N-Channel Enhancement Mode Field Effect Transistor

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Symbol

Min

Typ

Max

Units

BVDSS

20

V

1

IGSS

±10

uA

VGS(th)

0.5

V

m ohm

VGS=4.5V , ID=4.75A

RDS(ON)

Drain-Source On-State Resistance

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=1.0mA

VDS=18V , VGS=0V

VGS= ±12V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

ON CHARACTERISTICS

STC9204

Ver 1.1

0.85

1.5

gFS

28

S

CISS

980

pF

COSS

213

pF

CRSS

189

pF

Qg

24

nC

66

nC

Qgs

116

nC

Qgd

46

tD(ON)

10.7

ns

tr

2.1

ns

tD(OFF)

5.4

ns

tf

ns

Gate-Drain Charge

VDS=10V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=16V

ID=4.75A

VGS=4.5V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VDS=5V , ID=4.75A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

Forward Transconductance

Reverse Transfer Capacitance

VGS=4.0V , ID=4.75A

m ohm

c

f=1.0MHz

c

VDS=16V,ID=9.5A,

VGS=4.5V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VSD

Diode Forward Voltage

VGS=0V,IS=9.5A

0.84

1.2

V

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

c.Guaranteed by design, not subject to production testing.

_

www.samhop.com.tw

Dec,08,2015

2

_

7.8

10.0

8.0

10.3

VGS=3.7V , ID=4.75A

m ohm

VGS=2.5V , ID=4.75A

m ohm

10.5

14.2

6.3

6.5

8.0

VGS=3.1V , ID=4.75A

m ohm

9.0

11.8

7.0

8.2

10.6

6.7

Số phần tương tự - STC9204

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