STB10N03 datasheet(1/8 Pages) SAMHOP

tên linh kiện	STB10N03

Giải thích chi tiết về linh kiện	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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nhà sản xuất	SAMHOP [SamHop Microelectronics Corp.]

Trang chủ	http://www.samhop.com.tw

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S mHop Microelectronics C orp.

a

Symbol

VDS

VGS

IDM

0.55

62.5

W

A

PD

°C

227

-55 to 150

ID

Units

Parameter

100

120

480

°C/W

V

±20

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

°C/W

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

100V

120A

4.0 @ VGS=10V

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handling capability.

TO-263 package.

S

G

D

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Limit

Drain Current-Continuous

b

TC=25°C

-Pulsed

b

A

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R JC

R JA

www.samhop.com.tw

Aug,31,2016

1

Details are subject to change without notice.

A

76

TC=100°C

91

W

STB10N03

Ver 1.0

Green

Product

EAS

Single Pulse Avalanche Energy

c

mJ

300

STB S ER IE S

TO-263(DD-P AK )

G

S

D

Số phần tương tự - STB10N03

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Mô tả tương tự - STB10N03

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STB10N03 bảng dữ liệu(PDF) 1 Page - SamHop Microelectronics Corp.

STB10N03 bảng dữ liệu(HTML) 1 Page - SamHop Microelectronics Corp.

Số phần tương tự - STB10N03

Mô tả tương tự - STB10N03

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