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FDD86369 bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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FDD86369 bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
2 / 8 page www.onsemi.com Semiconductor Components Industries, LLC, 2017 Publication Order Number: January, 2017, Rev. 1.0 FDD86369/D 1 FDD86369 N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 m Ω Features Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Applications PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12V Systems D G S G S D TO-252 D-PAK (TO-252) MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter Ratings Units VDSS Drain-to-Source Voltage 80 V VGS Gate-to-Source Voltage ±20 V ID Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 90 A Pulsed Drain Current TC = 25°C See Figure 4 EAS Single Pulse Avalanche Energy (Note 2) 29 mJ PD Power Dissipation 150 W Derate Above 25oC1.0 W/oC TJ, TSTG Operating and Storage Temperature -55 to + 175 oC RθJC Thermal Resistance, Junction to Case 1.0 oC/W RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 52 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD86369 FDD86369 D-PAK(TO-252) 13” 16 mm 2500 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 14μH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. For current package drawing, please refer to the ON website at http://www.fairchildsemi.com/package‐drawings/ TO/TO252A03.pdf |
Số phần tương tự - FDD86369 |
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Mô tả tương tự - FDD86369 |
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