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FSB50450B bảng dữ liệu(PDF) 6 Page - ON Semiconductor

tên linh kiện FSB50450B
Giải thích chi tiết về linh kiện  Motion SPM 5 Series
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nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
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Semiconductor Components Industries, LLC, 2017
www.fairchildsemi.com
FSB50450B / FSB50450BS . Rev. 1.2
www.onsemi.com
5
Recommended Operating Condition
Figure 3. Built-In Bootstrap Diode Characteristics (Typical)
Notes:
4. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 5 product. VPN should be sufficiently less than this
value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case.
5. tON and tOFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field
applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.
6. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test
circuit that is same as the switching test circuit.
7. Vts is only for sensing-temperature of module and cannot shutdown MOSFETs automatically.
8. Built-in bootstrap diode includes around 15 Ωresistance characteristic. Please refer to Figure 2.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VPN
Supply Voltage
Applied between P and N
-
300
400
V
VDD
Control Supply Voltage
Applied between VDD and COM
13.5
15.0
16.5
V
VBS
High-Side Bias Voltage
Applied between VB and VS
13.5
15.0
16.5
V
VIN(ON)
Input ON Threshold Voltage
Applied between VIN and COM
3.0
-
VDD
V
VIN(OFF) Input OFF Threshold Voltage
0
-
0.6
V
tdead
Blanking Time for Preventing
Arm-Short
VDD = VBS = 13.5 ~ 16.5 V, TJ ≤ 150°C
1.0
-
-
μs
fPWM
PWM Switching Frequency
TJ ≤ 150°C
-
15
-
kHz
01
23
456
78
9
10
11
12
13
14
15
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Built-In Bootstrap Diode V
F-IF Characteristic
V
F [V]
TC = 25°C


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