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SMF40A bảng dữ liệu(PDF) 1 Page - Vishay Siliconix

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Giải thích chi tiết về linh kiện  Surface Mount ESD Protection Diodes
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SMF40A bảng dữ liệu(HTML) 1 Page - Vishay Siliconix

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SMF5V0A to SMF51A
Document Number 85811
Rev. 2.0, 29-Apr-05
Vishay Semiconductors
www.vishay.com
1
17249
Surface Mount ESD Protection Diodes
Features
• For surface mounted applications
• Low-profile package
• Optimized for LAN protection applications
• Ideal for ESD protection of data lines in
accordance with IEC 61000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in
accordance with IEC 61000-4-4 (IEC801-4)
• IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
• Low incremental surge resistance, excellent
clamping capability
• 200 W peak pulse power capability with a
10/1000
µs waveform, repetition rate
(duty cycle): 0.01 %
• Very fast response time
• High temperature soldering guaranteed:
260 °C/ 10 seconds at terminals
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: JEDEC DO-219AB (SMF®) Plastic case
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position: Any
Weight: approx. 15 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 30 k/box
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
1) Non-repetitive current pulse and derated above T
A = 25 °C
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
2) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (
≥ 40 µm thick)
Parameter
Test condition
Symbol
Value
Unit
Peak pulse power dissipation
10/1000
µs waveform1)
PPPM
200
W
8/20
µs waveform1)
PPPM
1000
W
Peak pulse current
10/1000
µs waveform1)
IPPM
next
Table
A
Peak forward surge current
8.3 ms single half sine-wave
IFSM
20
A
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance2)
RthJA
180
K/W
Operation junction and storage
temperature range
Tstg, TJ
- 55 to + 150
°C
e3


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