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LM73605RNPR bảng dữ liệu(PDF) 7 Page - Texas Instruments |
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LM73605RNPR bảng dữ liệu(HTML) 7 Page - Texas Instruments |
7 / 53 page 7 LM73605, LM73606 www.ti.com SNVSAH5 – SEPTEMBER 2017 Product Folder Links: LM73605 LM73606 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Electrical Characteristics (continued) Limits apply over the recommended operating junction temperature (TJ) range of –40°C to +125°C, unless otherwise stated. Minimum and maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated, the following conditions apply: VIN = 12 V, VOUT = 3.3 V, fSW = 500 kHz. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT (2) This current limit was measured as the internal comparator trip point. Due to inherent delays in the current limit comparator and drivers, the peak current limit measured in closed loop with faster slew rate will be larger, and valley current limit will be lower. (3) Measured at pins (4) Ensured by design HIGH SIDE DRIVER (CBOOT PIN) VCBOOT_UVLO CBOOT - SW undervoltage lockout 1.6 2.2 2.7 V CURRENT LIMITS AND HICCUP IHS_LIMIT Short-circuit, high-side current limit (2) LM73605 6 7.3 8.35 A LM73606 7.4 8.7 9.85 ILS_LIMIT Low-side current limit (2) LM73605 4.79 5.5 6.1 A LM73606 5.8 6.6 7.25 INEG_LIMIT Negative current limit LM73605 –5 A LM73606 –6 VHICCUP Hiccup threshold on FB pin 0.36 0.4 0.44 V IL_ZC Zero cross-current limit 0.06 A SOFT START (SS/TRK PIN) ISSC Soft-start charge current 1.8 2 2.2 µA RSSD Soft-start discharge resistance UVLO, TSD, OCP, or EN = 0 1 kΩ POWER GOOD (PGOOD PIN) and OVERVOLTAGE PROTECTION VPGOOD_OV Power-good overvoltage threshold % of FB voltage 106% 110% 113% VPGOOD_UV Power-good undervoltage threshold % of FB voltage 86% 90% 93% VPGOOD_HYS Power-good hysteresis % of FB voltage 1.2% VPGOOD_VALID Minimum input voltage for proper PGOOD function 50-µA pullup to PGOOD pin, VEN = 0 V, TJ = 25°C 1.3 2 V RPGOOD Power-good ON-resistance VEN = 2.5V 40 100 Ω VEN = 0 V 30 90 MOSFETS RDS_ON_HS (3) High-side MOSFET ON- resistance IOUT = 1 A, VBIAS = VOUT = 3.3 V 53 90 m Ω RDS_ON_LS (3) Low-side MOSFET ON- resistance IOUT = 1 A, VBIAS = VOUT = 3.3 V 31 55 m Ω THERMAL SHUTDOWN TSD (4) Thermal shutdown threshold Shutdown threshold 160 °C Recovery threshold 135 °C (1) Ensured by design 6.6 Timing Characteristics MIN NOM MAX UNIT CURRENT LIMITS AND HICCUP NOC (1) Number of switching cycles before hiccup is tripped 128 Cycles tOC Overcurrent hiccup retry delay time 46 ms |
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