TSAL4400 datasheet(2/5 Pages) VISHAY

tên linh kiện	TSAL4400

Giải thích chi tiết về linh kiện	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

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TSAL4400

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 03-Nov-16

2

Document Number: 81006

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 3 - Pulse Forward Current vs. Pulse Duration

Fig. 4 - Forward Current vs. Forward Voltage

0

20

40

60

80

100

120

140

160

180

0

1020

3040506070

8090100

21317

Tamb - Ambient Temperature (°C)

R

thJA = 300 K/W

0

20

40

60

80

100

120

0

10

203040

50607080

90 100

Tamb - Ambient Temperature (°C)

21318

R

thJA = 300 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp = 20 ms

VF

-

1.35

1.6

V

IF = 1 A, tp = 100 μs

VF

-2.6

3

V

Temperature coefficient of VF

IF = 1 mA

TKVF

--1.8-

mV/K

Reverse current

VR = 5 V

IR

-

10

μA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

-60

-

pF

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie

16

36

80

mW/sr

IF = 1 A, tp = 100 μs

Ie

135

290

-

mW/sr

Radiant power

IF = 100 mA, tp = 20 ms

φe

-40

-

mW

Temperature coefficient of

φe

IF = 20 mA

TK

φe

-

-0.6

-

%/K

Angle of half intensity

ϕ

-± 25

-

deg

Peak wavelength

IF = 100 mA

λp

-

940

-

nm

Spectral bandwidth

IF = 100 mA

Δλ

-25

-

nm

Temperature coefficient of

λp

IF = 100 mA

TK

λp

-0.25-

nm/K

Rise time

IF = 100 mA

tr

-15

-

ns

Fall time

IF = 100 mA

tf

-15

-

ns

tp - Pulse Duration (ms)

96 11987

100

101

10-1

100

102

10-2

tp/T = 0.01

IFSM = 1 A (Single Pulse)

0.05

0.1

0.5

1.0

1

10

100

10 000

01234

V

F - Forward Voltage (V)

1000

tp = 100 µs

tp/T = 0.001

13600

Số phần tương tự - TSAL4400

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	TSAL4400	81Kb / 5P	GaAs/GaAlAs IR Emitting Diode in 짰3 mm (T.1) Package Rev. 3, 20-May-99
	TSAL4400	110Kb / 5P	High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs Rev. 1.6, 16-Sep-08
	TSAL4400	112Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2022
	TSAL4400	112Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023
	TSAL4400-RSZ	112Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023

More results

Mô tả tương tự - TSAL4400

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	VSML3710	139Kb / 7P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW Rev. 1.6, 22-Oct-14
	TSAL6200	110Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW Rev. 2.4, 13-Mar-14
	TSAL6100	108Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2022
	VSML3710	138Kb / 7P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2022
	TSAL6200	108Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023
	TSML1000	198Kb / 9P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW Rev. 2.1, 13-Mar-14
	TSML1040	164Kb / 9P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023
	VSML3710	137Kb / 7P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023
	TSAL6100UL	116Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW Rev. 1.0, 16-Jun-16
	TSML1000	196Kb / 9P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2022

More results

TSAL4400 bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

TSAL4400 bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

Số phần tương tự - TSAL4400

Mô tả tương tự - TSAL4400

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