KTB1366 datasheet(1/2 Pages) JIANGSU

tên linh kiện	KTB1366

Giải thích chi tiết về linh kiện	TO-220-3L Plastic-Encapsulate Transistors

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nhà sản xuất	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

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TO-220-3L

1. BASE

2. COLLECTOR

3. EMITTER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220-3L Plastic-Encapsulate Transistors

KTB1366

TRANSISTOR (PNP)

FEATURES

Low Collector Saturation Voltage

Complementary to KTD2058

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-1mA,IE=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-50mA,IB=0

-60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA,IC=0

-7

V

Collector cut-off current

ICBO

VCB=-60V,IE=0

-100

μA

Emitter cut-off current

IEBO

VEB=-7V,IC=0

-100

μA

hFE(1)

VCE=-5V, IC=-0.5A

60

200

DC current gain

hFE(2)

VCE=-5V, IC=-3A

20

Collector-emitter saturation voltage

VCE(sat)

IC=-2A,IB=-0.2A

-1

V

Base-emitter voltage

VBE

VCE=-5V, IC=-0.5A

-1

V

Collector output capacitance

Cob

VCB=-10V,IE=0, f=1MHz

150

pF

Transition frequency

fT

VCE=-5V,IC=-0.5A

9

MHz

CLASSIFICATION OF hFE (1)

RANK

O

Y

RANGE

60-120

100-200

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current

-3

A

PC

Collector Power Dissipation

2

W

RθJA

Thermal Resistance From Junction To Ambient

63

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

B,Nov,2014

Số phần tương tự - KTB1366

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
KEC(Korea Electronics)	KTB1366	295Kb / 2P	TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)
SHENZHEN YONGERJIA INDU...	KTB1366	71Kb / 1P	TRANSISTOR (PNP)
Inchange Semiconductor ...	KTB1366	150Kb / 2P	isc Silicon PNP Power Transistor
Foshan Blue Rocket Elec...	KTB1366	1Mb / 6P	Silicon PNP transistor in a TO-220F Plastic Package.
Nanjing International G...	KTB1366	1Mb / 3P	TO-220-3L Plastic-Encapsulate Transistors

More results

Mô tả tương tự - KTB1366

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Nanjing International G...	TIP127	1Mb / 2P	TO-220-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Elec...	2SB507	361Kb / 2P	TO-220-3L Plastic-Encapsulate Transistors
	2SB861	1Mb / 3P	TO-220-3L Plastic-Encapsulate Transistors
	2SB1185	549Kb / 2P	TO-220-3L Plastic-Encapsulate Transistors
	2SA1012	3Mb / 3P	TO-220-3L Plastic-Encapsulate Transistors
	TIP42	1Mb / 3P	TO-220-3L Plastic-Encapsulate Transistors
	2SD2137	624Kb / 2P	TO-220 -3L Plastic-Encapsulate Transistors
	2SD2137A	570Kb / 2P	TO-220-3L Plastic-Encapsulate Transistors
Nanjing International G...	2SC2073	1,013Kb / 3P	TO-220-3L Plastic-Encapsulate Transistors
	2SD1762	1Mb / 4P	TO-220-3L Plastic-Encapsulate Transistors
	2SB1185	1Mb / 3P	TO-220-3L Plastic-Encapsulate Transistors

More results

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