2SC1359 datasheet(1/3 Pages) JIANGSU

tên linh kiện	2SC1359

Giải thích chi tiết về linh kiện	TO-92 Plastic-Encapsulate Transistors

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TO – 92

1. EMITTER

2. COLLECTOR

3. BASE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SC1359

TRANSISTOR (NPN)

FEATURES

Optimum for RF Amplification of FM/AM Radios.

High Transition Frequency fT.

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 0.1mA,IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=10V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=10V, IC=1mA

70

220

Collector-emitter saturation voltage

VCE(sat)

IC=15mA,IB=1.5mA

0.2

V

Base-emitter saturation voltage

VBE (sat)

IC=15mA,IB=1.5mA

1.2

V

Transition frequency

fT

VCE=10V,IC=1mA, f=200MHz

150

MHz

CLASSIFICATION OF hFE

RANK

B

C

RANGE

70-140

110-220

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

30

mA

PC

Collector Power Dissipation

400

mW

RθJA

Thermal Resistance From Junction To Ambient

312

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

C,Dec,2015

Số phần tương tự - 2SC1359

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