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BTB41-200 bảng dữ liệu(PDF) 1 Page - Sirectifier Semiconductors

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Giải thích chi tiết về linh kiện  Discrete Triacs
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BTB41-200 bảng dữ liệu(HTML) 1 Page - Sirectifier Semiconductors

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BTB41
Discrete Triacs(Non-Isolated)
ABSOLUT
E MAXIMUM RATINGS
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine wave)
TO-247AD
Tc = 80 °C
41
A
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 60 Hz
t = 16.7 ms
420
A
F = 50 Hz
t = 20 ms
400
I²tI²t Value for fusing
tp = 10 ms
880
A²s
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr < 100 ns
F = 120 Hz
Tj = 125°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
8
A
PG(AV)
Average gate p ower diss ipation
Tj = 125°C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Unit
IGT (1)
VD = 12 V
RL = 33
I - II - III
MAX.
mA
VGT
ALL
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kTj = 125°C
ALL
MIN.
0.2
V
IH (2)
IT = 500 mA
MAX.
mA
IL
IG = 1.2 IGT
I- III-IV
MAX.
mA
II
dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C
MIN.
V/µs
(dI/dt)c (2) Without snubber
Tj = 125°C
MIN.
A/ms
Symbol
_
VDSM/VRSM Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25°C
VDRM/VRRM
+ 100
V
Dimensions TO-247AD
Dim.
Millimeter
Inches
Min. Max. Min.
Max.
A
19.81 20.32 0.780 0.800
B
20.80 21.46 0.819 0.845
C
15.75 16.26 0.610 0.640
D
3.55
3.65 0.140 0.144
E
4.32
5.49 0.170 0.216
F
5.4
6.2 0.212 0.244
G
1.65
2.13 0.065 0.084
H
-
4.5 -
0.177
J
1.0
1.4 0.040 0.055
K
10.8
11.0 0.426 0.433
L
4.7
5.3 0.185 0.209
M
0.4
0.8 0.016 0.031
N
1.5
2.49 0.087 0.102
T2
T1
G
IV
Value
50
100
80
70
160
500
10
BT 41-200
BT 41-400
BT 41-600
BT 41-800
BT 41-1000
BT 41-1200
VDR
M
V
200
400
600
800
1000
1200
VDS
M
V
220
450
700
900
1100
1300
P1
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Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com


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