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LM556-MIL

SNAS746 – JUNE 2017

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Copyright © 2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability

and specifications.

(3)

For operating at elevated temperatures the device must be derated based on a 150°C maximum junction temperature and a thermal

resistance of 77°C/W (Plastic Dip), and 110°C/W (SO-14 Narrow).

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

Supply voltage

18

V

LM556CM

410

mW

LM556CN

1620

Operating temperature, LM556C

0

70

°C

Soldering information

PDIP package soldering (10 seconds)

260

°C

SOIC package vapor phase (60 seconds)

215

SOIC package infrared (15 seconds)

220

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±500

V

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage

4.5

16

V

Operating free-air temperature

0

70

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

LM556-MIL

UNIT

D (SOIC)

NFF (PDIP)

14 PINS

14 PINS

Junction-to-ambient thermal resistance

85.3

48.0

°C/W

Junction-to-case (top) thermal resistance

45.8

34.9

°C/W

Junction-to-board thermal resistance

39.6

27.9

°C/W

Junction-to-top characterization parameter

11.7

19.3

°C/W

Junction-to-board characterization parameter

39.4

27.8

°C/W

Junction-to-case (bottom) thermal resistance

—

—

°C/W