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ST3DV520EQTR bảng dữ liệu(PDF) 6 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  MUX/DEMUX for 4 differential channel LVDS and DDC
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Electrical characteristics
ST3DV520E
6/19
Doc ID 18318 Rev 1
3
Electrical characteristics
Table 7.
DC electrical characteristics
Symbol
Parameter
Test condition
Value
Unit
-40 to 85 °C
Min
Typ
Max
VIH
Voltage input high (SEL1,
2)
High level guaranteed
2.4
-
-
V
VIL
Voltage input low
(SEL1, 2)
Low level guaranteed
-0.5
-
0.8
V
VIK
Clamp diode voltage
(SEL1, 2)
VCC = 3.6 V
IIN = -18 mA
-
-0.8
-1.2
V
IIH
Input high current
(SEL1, 2)
VCC = 3.6 V
VIN = VCC
--
±5
µA
IIL
Input low current
(SEL1, 2)
VCC = 3.6 V
VIN = GND
--
±5
µA
IOFF(SW)
(1)
Leakage current through
the switch common
terminals (A to H)
(DDC1 to DDC2)
VCC = 3.6 V
A to H = VCC
DDC1 to DDC2 = VCC
A0 to H0 = 0 V
A1 to H1 = floating
DDCx_0=0V
DDCx1 = floating
SEL1 = VCC, SEL2 = VCC
--
±1
µA
IOFF(SEL1) SEL1 pin leakage current
VCC = 0 V
SEL1, 2 = 0 to 3.6 V
--
±1
µA
RON
Switch ON resistance(2)
VCC = 3.0 V
VIN = 1.5 to VCC
IIN = -40 mA
-4.0
6.5
Ω
RFLAT
ON resistance flatness (2)
(3)
VCC = 3.0 V
VIN at 1.5 and VCC
IIN = -40 mA
-0.5
-
Ω
ΔR
ON
ON resistance match
between channel
ΔR
ON = RONMAX-RONMIN
(2)(4)
VCC = 3.0 V
VIN = 1.5 to VCC
IIN = -40 mA
-0.4
1
Ω
1.
Refer to Figure 4: Test circuit for leakage current (IOFF) on page 9
2.
Measured by voltage drop between channels at indicated current through the switch. ON resistance is determined by the
lower of the voltages.
3.
Flatness is defined as the difference between the RONMAX and RONMIN of ON resistance over the specified range.
4.
ΔR
ON measured at same VCC, temperature and voltage level.


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