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BUK95180-100A bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

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Giải thích chi tiết về linh kiện  Logic level FET
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nhà sản xuất  PHILIPS [NXP Semiconductors]
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BUK95180-100A bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
TrenchMOS
 transistor
BUK95180-100A
Logic level FET
BUK96180-100A
STATIC CHARACTERISTICS
T
j= 25˚C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
100
-
-
V
voltage
T
j = -55˚C
89
-
-
V
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
1.5
2.0
V
T
j = 175˚C
0.5
-
-
V
T
j = -55˚C
-
-
2.3
V
I
DSS
Zero gate voltage drain current
V
DS = 100 V; VGS = 0 V;
-
0.05
10
µA
T
j = 175˚C
-
-
500
µA
I
GSS
Gate source leakage current
V
GS = ±10 V; VDS = 0 V
-
2
100
nA
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 5 A
-
165
180
m
resistance
T
j = 175˚C
-
-
450
m
V
GS = 10 V; ID = 5 A
-
152
173
m
V
GS = 4.5 V; ID = 5 A
-
170
200
m
DYNAMIC CHARACTERISTICS
T
mb = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
464
619
pF
C
oss
Output capacitance
-
60
72
pF
C
rss
Feedback capacitance
-
37
50
pF
t
d on
Turn-on delay time
V
DD = 30 V; Rload =1.2Ω;-
9
20
ns
t
r
Turn-on rise time
V
GS = 5 V; RG = 10 Ω
-
112
157
ns
t
d off
Turn-off delay time
-
18
27
ns
t
f
Turn-off fall time
-
25
38
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die(TO220AB)
L
d
Internal drain inductance
Measured from upper edge of drain
-
2.5
-
nH
tab to centre of die(SOT404)
L
s
Internal source inductance
Measured from source lead to
-
7.5
-
nH
source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
11
A
current
I
DRM
Pulsed reverse drain current
-
-
44
A
V
SD
Diode forward voltage
I
F = 5 A; VGS = 0 V
-
0.85
1.2
V
I
F = 11 A; VGS = 0 V
-
1.1
-
V
t
rr
Reverse recovery time
I
F = 11 A; -dIF/dt = 100 A/µs;
-
49
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
0.13
-
µC
May 2000
2
Rev 1.100


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