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FSB50325S bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FSB50325S bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSB50325S Rev. A September 2006 FSB50325S Smart Power Module (SPM) Features • 250V 1.5A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sens- ing applications • HVIC for gate driving and undervoltage protection • 3/5V CMOS/TTL compatible, active-high interface • Optimized for low electromagnetic interference • Isolation voltage rating of 1500Vrms for 1min. • Surface mounted device package • Moisture Sensitive Level 3 General Description FSB50325S is a tiny smart power module (SPM) based on FRFET technology as a compact inverter solution for small power motor drive applications such as fan motors and water suppliers. It is composed of 6 fast-recovery MOSFET (FRFET), and 3 half-bridge HVICs for FRFET gate driving. FSB50325S provides low electromagnetic interference (EMI) characteristics with optimized switching speed. Moreover, since it employs FRFET as a power switch, it has much better ruggedness and larger safe operation area (SOA) than that of an IGBT-based power module or one-chip solution. The package is optimized for the thermal performance and compactness for the use in the built-in motor application and any other application where the assembly space is concerned. FSB50325S is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference. Absolute Maximum Ratings Symbol Parameter Conditions Rating Units VPN DC Link Input Voltage, Drain-source Voltage of each FRFET 250 V ID25 Each FRFET Drain Current, Continuous TC = 25°C 1.5 A ID80 Each FRFET Drain Current, Continuous TC = 100°C 1.0 A IDP Each FRFET Drain Current, Peak TC = 25°C, PW < 100µs 3.0 A PD Maximum Power Dissipation TC = 25°C, Each FRFET 12 W VCC Control Supply Voltage Applied between VCC and COM 20 V VBS High-side Bias Voltage Applied between VB(U)-U, VB(V)-V, VB(W)-W 20 V V N Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V TJ Operating Junction Temperature -20 ~ 150 °C TSTG Storage Temperature -50 ~ 150 °C RθJC Junction to Case Thermal Resistance Each FRFET under inverter operating con- dition (Note 1) 10.2 °C/W VISO Isolation Voltage 60Hz, Sinusoidal, 1 minute, Connection pins to heatsink 1500 Vrms |
Số phần tương tự - FSB50325S |
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Mô tả tương tự - FSB50325S |
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