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1 / 10 page March 2007 Rev 1 1/10 STTH30R04 Ultrafast recovery diode Main product characteristics Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ High junction temperature ■ Insulated package: DOP3I – Electrical insulation = 2500 VRMS Package capacitance = 12 pF Description The compromise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Note: D2PAK - 2 anode terminals must be shorted on board. Order codes IF(AV) 30 A VRRM 400 V Tj 175° C VF (typ) 0.97 V trr 24 ns Part Number Marking STTH30R04D STTH30R04D STTH30R04G STTH30R04G STTH30R04G-TR STTH30R04G STTH30R04W STTH30R04W STTH30R04PI STTH30R04PI K A K A K A A K A K A K AA TO-220AC STTH30R04D DO-247 STTH30R04W D2PAK STTH30R04G DOP3I STTH30R04PI Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) RMS forward current 50 A IF(AV) Average forward current, δ = 0.5 TO-220AC / DO-247 / D2PAK Tc = 120° C 30 A DOP3I Tc = 90° C IFRM Repetitive peak forward current tp = 10 µs, F = 1 kHz 500 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 300 A Tstg Storage temperature range -65 to +175 ° C Tj Maximum operating junction temperature range -40 to +175 ° C www.st.com |
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