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5 / 12 page STRH12P10ESY3 Electrical characteristics 5/12 2.2 Post-irradiation The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The technology is extremely resistant to assurance well functioning of the device inside the radiation environments. Every manufacturing lot is tested for total ionizing dose. (@Tj=25°C up to 100Krad (a)) Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 12 48 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 12A, VGS = 0 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12A, di/dt = 100A/µs VDD= 9V, Tj = 25°C 248 2.3 19 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12A, di/dt = 100A/µs VDD= 9V, Tj = 150°C 300 3 22 ns µC A a. According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec. Table 8. On/off states Symbol Parameter Test conditions Min. Typ. Max Unit IDSS Zero gate voltage drain current (VGS = 0) 80% BVDss 10 µA IGSS Gate body leakage current (VDS = 0) VGS = ±18V ± 100 nA V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS = 0V 100 V VGS(th) Gate threshold voltage VDS =VGS, ID = 1mA 24.5 V RDS(on) Static drain-source on resistance VGS = 12V, ID = 12A 0.265 0.3 Ω |
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