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SZNUP4114HMR6T1G bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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2 / 9 page NUP4114 Series, SZNUP4114 Series http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM (Note 1) 5.5 V Breakdown Voltage VBR IT = 1 mA, (Note 2) 5.5 V Reverse Leakage Current IR VRWM = 5.5 V 1.0 mA Clamping Voltage VC IPP = 5 A (Note 3) 9.0 V Clamping Voltage VC IPP = 8 A (Note 3) 10 V Clamping Voltage VC IPP = 1 A (Note 4) 8.3 10 V ESD Clamping Voltage VC Per IEC61000−4−2 (Note 5) See Figures 1 & 2 Maximum Peak Pulse Current IPP 8x20 ms Waveform (Note 3) 12 A Junction Capacitance CJ VR = 0 V, f = 1 MHz between I/O Pins and GND 0.6 pF Junction Capacitance CJ VR = 0 V, f = 1 MHz between I/O Pins 0.3 pF 1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 2. VBR is measured at pulse test current IT. 3. Nonrepetitive current pulse (Pin 5 to Pin 2) 4. Nonrepetitive current pulse (I/O to GND). 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 6. Include SZ−prefix devices where applicable. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 |
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