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TP0202K-T1-E3 bảng dữ liệu(PDF) 4 Page - Vishay Siliconix |
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TP0202K-T1-E3 bảng dữ liệu(HTML) 4 Page - Vishay Siliconix |
4 / 4 page TP0202K Vishay Siliconix www.vishay.com 4 Document Number: 71609 S-41777—Rev. D, 04-Oct-04 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10−3 10−2 1 10 600 10−1 10−4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 350_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 1.2 1.5 1 100 1000 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage VSD − Source-to-Drain Voltage (V) 10 TJ = −55_C VGS = 0 V Threshold Voltage Variance Over Temperature −0.3 −0.2 −0.1 −0.0 0.1 0.2 0.3 0.4 0.5 −50 −25 0 25 50 75 100 125 150 ID = 250 mA TJ − Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 −50 −25 0 25 50 75 100 125 150 On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) VGS = 10 V @ 200 mA VGS = 4.5 V @ 50 mA TJ − Junction Temperature (_C) IGSS vs. Temperature 125 150 1 100 1000 25 50 75 100 10 VGS = 10 V VGS = 5 V For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71609 . |
Số phần tương tự - TP0202K-T1-E3 |
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Mô tả tương tự - TP0202K-T1-E3 |
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