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1N5400 bảng dữ liệu(PDF) 1 Page - HY ELECTRONIC CORP. |
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1N5400 bảng dữ liệu(HTML) 1 Page - HY ELECTRONIC CORP. |
1 / 3 page FEATURES ● Low cost ● Diffused junction ● Low forward voltage drop ● Low reverse leakage current ● High current capability ● The plastic material carries UL recognition 94V-0 MECHANICAL DATA ●Case: JEDEC DO-27 molded plastic ●Polarity: Color band denotes cathode ●Weight: 0.04 ounces , 1.1grams ●Mounting position: Any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% 1N 1N 1N 1N 1N 1N 1N 1N 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 500 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 210 280 350 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 500 600 800 1000 V Maximum Average Forward Rectified Current @TA =55 ℃ Peak Forward Surge Current 8.3ms Single Half Sine-Wave Supe Imposed on Rated Load(JEDEC Method) Maximum Forward Voltage at 3.0A DC VF V Maximum DC Reverse Current @TJ=25℃ at Rated DC Blocking Voltage @TJ=100℃ Typical Junction Capacitance (Note1) CJ pF Typical Thermal Resistance (Note2) RθJA ℃ /W Operating Temperature Range TJ ℃ Storage Temperature Range TSTG ℃ 3.The typical data above is for reference only(典型值仅供参考). Rev. 7, 13-Mar-2017 -55 to +150 -55 to +150 NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC PLASTIC SILICON RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes I(AV) 35 50 1N5400 thru 1N5408 1.0 50 3.0 A A UNIT 200 IFSM SYMBOL CHARACTERISTICS IR 5.0 μA 2.Thermal resistance junction to ambient. 15 .052(1.3) .048(1.2) .220(5.6) .197(5.0) DIA. DIA. DO- 27 210 .375(9.5) .335(8.5) MIN. .984(25.0) MIN. .984(25.0) |
Số phần tương tự - 1N5400_17 |
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Mô tả tương tự - 1N5400_17 |
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