MDA0336EURH datasheet(2/5 Pages) MGCHIP

tên linh kiện	MDA0336EURH

Giải thích chi tiết về linh kiện	Common-Drain N-Channel Trench MOSFET 30V, 9A, 9.5m(ohm)

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nhà sản xuất	MGCHIP [MagnaChip Semiconductor.]

Trang chủ	http://www.magnachip.co.kr

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2 / 5 page

Dec 2014. Version 1.0

MagnaChip Semiconductor Ltd.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDA0336EURH

-55~150

oC

2x5 DFN

Tape and Reel

Halogen Free

Electrical Characteristics (Ta =25

oC unless otherwise noted)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

20

-

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

0.60

1.10

1.60

Drain Cut-Off Current

IDSS

VDS = 20V, VGS = 0V

-

1

uA

Gate Leakage Current

IGSS

VGS = ±10V, VDS = 0V

-10.0

-

10.0

μA

Drain-Source Resistance

Note 2

RDS(ON)

VGS = 4.5V, ID = 9A

-

7.3

9.5

mΩ

VGS = 4.0V, ID = 9A

-

7.5

10

VGS = 3.5V, ID = 9A

-

7.9

10.5

VGS = 3.1V, ID = 9A

-

8.4

11.5

Forward Trans conductance

gfs

VDS = 5V, ID = 9A

-

40

-

S

Dynamic Characteristics

Total Gate Charge

Qg

V

DS

= 10V, I

D

= 9A, V

GS

= 4.5V

-

22

-

nC

Gate-Source Charge

Qgs

-

3.7

-

Gate-Drain Charge

Qgd

-

10

-

Input Capacitance

Ciss

V

DS

= 10V, V

GS

= 0V, f = 1MHz

-

1330

-

pF

Reverse Transfer Capacitance

Crss

-

449

-

Output Capacitance

Coss

-

475

-

Gate resistance

Rg

VGS = 0V, VDS = 0V, f = 1MHz

-

0.2

-

kΩ

Turn-On Delay Time

td(on)

VGS = 4.5V, VDS = 10V,

RL = 1.0Ω, RGEN = 3Ω

-

1.0

-

us

Rise Time

tr

-

0.15

-

Turn-Off Delay Time

td(off)

-

0.3

-

Fall Time

tf

-

2.0

-

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

I

S

= 1.0A, V

GS

= 0V

-

0.65

1

V

Body Diode Reverse Recovery Time

trr

I

F

= 9A, di/dt = 2

00A/μs

-

30

-

ns

Body Diode Reverse Recovery Charge

Qrr

-

25

-

nC

Notes :

1. The device current rating is derived from its thermal resistance and from the number and diameter of bonding wires. The testing current at wafer level is set

only for ease of testing. Actual package current ratings can be much higher.

2. RDS(ON) is Single MOS.

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