STY105NM50N datasheet(4/13 Pages) STMICROELECTRONICS

tên linh kiện	STY105NM50N

Giải thích chi tiết về linh kiện	N-channel 500 V, 0.019 廓 typ., 110 A, MDmesh??II Power MOSFET in a Max247 package

Download	13 Pages

Scroll/Zoom	100%

nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

Logo

4 / 13 page

Electrical characteristics

STY105NM50N

4/13

Doc ID 022226 Rev 3

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

500

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 500 V

VDS = 500 V, TC=125 °C

10

150

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 52 A

0.019

0.022

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

9600

-

pF

Coss

Output capacitance

-

500

-

pF

Crss

Reverse transfer

capacitance

-22

-

pF

Coss(eq)

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VDS = 0 to 400 V VGS = 0

-

1675

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

1.3

-

Ω

Qg

Total gate charge

VDD = 400 V, ID = 110 A,

VGS = 10 V

(see Figure 15)

-

326

-

nC

Qgs

Gate-source charge

-

40

-

nC

Qgd

Gate-drain charge

-

180

-

nC

Số phần tương tự - STY105NM50N

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STY100NM60N	815Kb / 13P	Low input capacitance and gate charge November 2012 Rev 2
	STY100NS20FD	260Kb / 8P	N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY??Power MOSFET
	STY100NS20FD	232Kb / 12P	N-channel 200V - 0.022廓 - 100A - Max247 MESH OVERLAY??Power MOSFET
	STY100NS20FD	232Kb / 12P	N-channel 200V - 0.022廓 - 100A - Max247 MESH OVERLAY??Power MOSFET

More results

Mô tả tương tự - STY105NM50N

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STY112N65M5	856Kb / 12P	N-channel 650 V, 0.019 廓, 96 A, MDmesh??V Power MOSFET in Max247 package
	STY139N65M5	971Kb / 13P	N-channel 650 V, 0.014 廓 typ., 130 A, MDmesh??V Power MOSFET in Max247 package
	STY145N65M5	788Kb / 13P	N-channel 650 V, 0.012 廓 typ., 138 A, MDmesh??V Power MOSFET in Max247 package
	STFI20NM65N	783Kb / 12P	N-channel 650 V, 15 A, 0.250 廓 typ., MDmesh??II Power MOSFET in a I짼PAKFP package December 2013 Rev 1
	STW60NM50N	757Kb / 13P	N-channel 500 V, 0.035 廓, 68 A, MDmesh??II Power MOSFET in a TO-247 package April 2013 Rev 2
	STW48NM60N	717Kb / 13P	N-channel 600 V, 0.055 廓 typ., 44 A MDmesh??II Power MOSFET in a TO-247 package
	STW62NM60N	793Kb / 13P	N-channel 600 V, 0.04 廓 typ., 65 A, MDmesh??II Power MOSFET in a TO-247 package December 2012 Rev 3
	STL23NM50N	659Kb / 13P	N-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package
	STD13NM50N	665Kb / 18P	N-channel 500 V, 0.285 Ω typ., 12 A MDmesh™ II Power MOSFET in a DPAK package DS12790 - Rev 1 - October 2018
	STY50N105DK5	716Kb / 12P	N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh™ DK5 Power MOSFET in a Max247 package December 2016

More results

STY105NM50N bảng dữ liệu(PDF) 4 Page - STMicroelectronics

STY105NM50N bảng dữ liệu(HTML) 4 Page - STMicroelectronics

Số phần tương tự - STY105NM50N

Mô tả tương tự - STY105NM50N

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

bảng dữ liệu tải về

Link URL