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STW20NM65N bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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September 2007
Rev 1
1/18
18
STW20NM65N-STI20NM65N-STF20NM65N
STB20NM65N-STP20NM65N
N-channel 650V - 0.16
Ω - 19A - TO-220/FP - D2/I2PAK - TO-247
Second generation MDmesh™ Power MOSFET
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
Table 1.
Device summary
Figure 1.
Internal schematic diagram
Type
VDSS
(@TJmax)
RDS(on) Max
ID
STB20NM65N
710V
< 0.19
19A
STI20NM65N
710V
< 0.19
19A
STF20NM65N
710V
< 0.19
19A(1)
1.
Limited only by maximum temperature allowed
STP20NM65N
710V
< 0.19
19A
STW20NM65N
710V
< 0.19
19A
TO-220
TO-220FP
I²PAK
1
2
3
1
2
3
1
2
3
1
2
3
TO-247
1
3
D²PAK
Order codes
Marking
Package
Packaging
STB20NM65N
20NM65N
D²PAK
Tape & reel
STI20NM65N
20NM65N
I²PAK
Tube
STF20NM65N
20NM65N
TO-220FP
Tube
STP20NM65N
20NM65N
TO-220
Tube
STW20NM65N
20NM65N
TO-247
Tube
www.st.com
Obsolete
Product(s)
- Obsolete
Product(s)
Obsolete
Product(s)
- Obsolete
Product(s)


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