STU3N45K3 datasheet(5/14 Pages) STMICROELECTRONICS

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STU3N45K3

Electrical characteristics

14

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 6.Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

Turn-on delay time

VDD = 225 V, ID = 0.9 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

-6.5

-

ns

tr

Rise time

-

5.4

-

ns

td(off)

Turn-off-delay time

-

17

-

ns

tf

Fall time

-

22

-

ns

Table 7.Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

Source-drain current

-

0.6

A

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

2.4

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

ISD = 0.6 A, VGS = 0

-

1.5

V

trr

Reverse recovery time

ISD = 1.8 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 20)

-175

ns

Qrr

Reverse recovery charge

-

550

nC

IRRM

Reverse recovery current

-

6

A

trr

Reverse recovery time

ISD = 1.8 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 20)

-185

ns

Qrr

Reverse recovery charge

-

600

nC

IRRM

Reverse recovery current

-

6.5

A

Table 8.Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

V(BR)GSO

Gate-source breakdown

voltage

IGS= ± 1 mA, ID=0

30

-

V

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