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4 / 14 page Electrical characteristics STQ3N45K3-AP 4/14 DocID024887 Rev 1 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 450 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 450 V VDS = 450 V, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ± 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on Static drain-source on resistance VGS = 10 V, ID = 0.6 A 3.3 4 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 50 V, f = 1 MHz, VGS = 0 -164 - pF Coss Output capacitance - 17 - pF Crss Reverse transfer capacitance -3 - pF Co(tr) (1) 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance time related VDS = 0 to 360 V, VGS = 0 -13 - pF Co(er) (2) 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance energy related -18 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 8 - Ω Qg Total gate charge VDD = 360 V, ID = 1.8 A, VGS = 10 V (see Figure 16) -9.5 - nC Qgs Gate-source charge - 2 - nC Qgd Gate-drain charge - 6 - nC |
Số phần tương tự - STQ3N45K3-AP |
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Mô tả tương tự - STQ3N45K3-AP |
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