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STPSC40065C bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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STPSC40065C bảng dữ liệu(HTML) 1 Page - STMicroelectronics |
1 / 9 page September 2016 DocID027965 Rev 3 1/9 This is information on a product in full production. www.st.com STPSC40065C 650 V power Schottky silicon carbide diode Datasheet - production data Features No reverse recovery charge in application current range Switching behavior independent of temperature Dedicated to PFC applications ECOPACK®2 compliant component Description The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter. Table 1: Device summary Symbol Value IF(AV) 2 x 20 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V A1 K A2 TO-247 A1 K A2 |
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