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STPSC40065C bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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September 2016
DocID027965 Rev 3
1/9
This is information on a product in full production.
www.st.com
STPSC40065C
650 V power Schottky silicon carbide diode
Datasheet - production data
Features
No reverse recovery charge in application
current range
Switching behavior independent of
temperature
Dedicated to PFC applications
ECOPACK®2 compliant component
Description
The SiC diode is a high voltage power Schottky
diode. It is manufactured using a silicon carbide
substrate. The wide band gap material allows the
design of a Schottky diode structure with a 650 V
rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns
are negligible. The minimal capacitive turn-off
behavior is independent of temperature.
Used as a freewheeling or output rectification
diode, this rectifier will enhance the performance
and form factor of the targeted power supply or
inverter.
Table 1: Device summary
Symbol
Value
IF(AV)
2 x 20 A
VRRM
650 V
Tj (max.)
175 °C
VF (typ.)
1.30 V
A1
K
A2
TO-247
A1
K
A2


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