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1 / 9 page This is information on a product in full production. September 2014 DocID026619 Rev 2 1/9 STPSC20H065C-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • AEC-Q101 qualified • ECOPACK®2 compliant component • PPAP capable Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. K (2) A1 (1) A2 (3) A1 K A2 A1 K A2 TO-220AB STPSC20H065CTY TO-247 STPSC20H065CWY Table 1. Device summary Symbol Value IF(AV) 2 x 10 A VRRM 650 V Tj (max) 175 °C www.st.com |
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