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STPS80H100C bảng dữ liệu(PDF) 2 Page - STMicroelectronics

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Characteristics
STPS80H100C
2/7
Doc ID 6727 Rev 3
1
Characteristics
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.5 x IF(AV) + 0.0055 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS) Forward rms current
50
A
IF(AV)
Average forward current
Tc = 155 °C
δ = 0.5
Per diode
Per device
40
80
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
400
A
IRRM
Repetitive peak reverse current
tp = 2 µs, F= 1 kHz
2
A
PARM
Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
39200
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
175
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
Total
0.7
0.5
°C/W
Rth(c)
Coupling
0.3
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
20
µA
Tj = 125 °C
7
20
mA
VF
(2)
2.
Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 40 A
0.8
V
Tj = 125 °C
IF = 40 A
0.65
0.7
Tj = 25 °C
IF = 80 A
0.94
Tj = 125 °C
IF = 80 A
0.79
0.84
dPtot
dTj
<
1
Rth(j-a)


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