STPS10SM80C datasheet(3/11 Pages) STMICROELECTRONICS

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STPS10SM80C

Characteristics

Doc ID 018721 Rev 1

3/11

To evaluate the conduction losses use the following equation:

P = 0.50 x IF(AV) + 0.023 x IF

2

(RMS)

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

3.2

15

µA

Tj = 125 °C

-

2.8

8

mA

VF

(2)

Forward voltage drop

Tj = 25 °C

IF = 2.5 A

-

0.560

0.610

V

Tj = 125 °C

-

0.485

0.520

Tj = 25 °C

IF = 5 A

-

0.685

0.745

Tj = 125 °C

-

0.575

0.615

Tj = 25 °C

IF = 10 A

-

0.815

0.880

Tj = 125 °C

-

0.660

0.730

1.

Pulse test: tp = 5 ms, δ < 2 %

2.

Pulse test: tp = 380 µs, δ < 2 %

Figure 2.

Average forward power dissipation

versus average forward current

(per diode)

Figure 3.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

01

2

3

45

67

δ = 0.05 δ = 0.1 δ = 0.2

δ = 0.5

δ = 1

T

δ = t / T

p

t

p

I

(A)

F(AV)

P

(W)

F(AV)

0

1

2

3

4

5

6

0

25

50

75

100

125

150

175

I

(A)

F(AV)

Rth(j-a) = Rth(j-c)

TO-220AB / I PAK / D PAK

22

TO-220FPAB

T

(°C)

amb

Figure 4.

Normalized avalanche power

derating versus pulse duration

Figure 5.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

P(tp)

P

(1µs)

ARM

t (µs)

p

0

0.2

0.4

0.6

0.8

1

1.2

25

50

75

100

125

150

P(T )

P

(25 °C)

ARM

j

ARM

T (°C)

j

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