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STP25N60M2-EP bảng dữ liệu(PDF) 5 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 600 V, 0.175typ., 18 A MDmesh??M2 EP Power MOSFET in a TO-220 package
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STP25N60M2-EP
Electrical characteristics
DocID027222 Rev 2
5/14
Table 8: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 9 A RG =
4.7 Ω,
VGS = 10 V (see Figure 15:
"Switching times test circuit for
resistive load" and Figure 20:
"Switching time waveform")
-
15
-
ns
tr
Rise time
-
10
-
ns
td(off)
Turn-off-delay time
-
61
-
ns
tf
Fall time
-
16
-
ns
Table 9: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
18
A
ISDM
(1)
Source-drain current
(pulsed)
-
72
A
VSD
(2)
Forward on voltage
VGS = 0 V, ISD = 18 A
-
1.6
V
trr
Reverse recovery time
ISD = 18 A, di/dt = 100 A/µs,
VDD = 100 V
(see Figure 17: " Test circuit for
inductive load switching and
diode recovery times")
-
360
ns
Qrr
Reverse recovery
charge
-
5
µC
IRRM
Reverse recovery
current
-
28
A
trr
Reverse recovery time
ISD = 18 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150 °C
(see Figure 17: " Test circuit for
inductive load switching and
diode recovery times")
-
445
ns
Qrr
Reverse recovery
charge
-
6.5
µC
IRRM
Reverse recovery
current
-
29
A
Notes:
(1)
Pulse width is limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%


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