STU13N65M2 datasheet(5/16 Pages) STMICROELECTRONICS

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Giải thích chi tiết về linh kiện	N-channel 650 V, 0.37 ??typ.,10 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

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STP13N65M2, STU13N65M2

Electrical characteristics

16

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

10

A

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

40

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

VGS = 0 V, ISD = 10 A

-

1.6

V

trr

Reverse recovery time

ISD =10 A, di/dt = 100 A/µs

VDD =60 V (see Figure 18)

-

312

ns

Qrr

Reverse recovery charge

-

2.7

µC

IRRM

Reverse recovery current

-

17.5

A

trr

Reverse recovery time

ISD = 10 A, di/dt = 100 A/µs,

VDD =60 V, Tj =150 °C

(see Figure 18)

-

464

ns

Qrr

Reverse recovery charge

-

4.1

µC

IRRM

Reverse recovery current

-

17.5

A

Số phần tương tự - STU13N65M2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STU13N60M2	1Mb / 18P	N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages February 2014 Rev 5

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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