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STP7N65M2 bảng dữ liệu(PDF) 4 Page - STMicroelectronics |
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4 / 18 page Electrical characteristics STP7N65M2, STU7N65M2 4/18 DocID026788 Rev 3 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 1 mA 650 V IDSS Zero gate voltage drain current VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C 100 µA IGSS Gate-body leakage current VDS = 0, VGS = ± 25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 2.5 A 0.98 1.15 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 270 - pF Coss Output capacitance - 14.5 - Crss Reverse transfer capacitance - 0.8 - C oss eq. (1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 - 108 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 7 - Ω Qg Total gate charge VDD = 520 V, ID = 5 A, VGS = 10 V (see Figure 17: "Gate charge test circuit") - 9 - nC Qgs Gate-source charge - 2.3 - nC Qgd Gate-drain charge - 4.3 - nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16: "Switching times test circuit for resistive load"and Figure 21: "Switching time waveform" ) - 8 - ns tr Rise time - 20 - ns td(off) Turn-off delay time - 30 - ns tf Fall time - 20 - ns |
Số phần tương tự - STP7N65M2 |
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Mô tả tương tự - STP7N65M2 |
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