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STL34N65M5
Electrical characteristics
15
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(v)
Voltage delay time
VDD = 400 V, ID = 18 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
-59
-
ns
tr(v)
Voltage rise time
-
8.7
-
ns
tf(i)
Current fall time
-
7.5
-
ns
tc(off)
Crossing time
-
12
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
(1)
1.
The value is rated according to Rthj-case and limited by package.
Source-drain current
-
22.5
A
ISDM
(1),(2)
2.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
90
A
VSD
(3)
3.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 22.5 A, VGS = 0
-
1.5
V
trr
Reverse recovery time
ISD = 22.5 A,
di/dt = 100 A/µs
VDD = 100 V (see Figure 16)
-
330
ns
Qrr
Reverse recovery charge
-
5.3
µC
IRRM
Reverse recovery current
-
32.5
A
trr
Reverse recovery time
ISD = 22.5 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16)
-
412
ns
Qrr
Reverse recovery charge
-
7.3
µC
IRRM
Reverse recovery current
-
35.5
A


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