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STL19N60DM2 bảng dữ liệu(PDF) 5 Page - STMicroelectronics |
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STL19N60DM2 bảng dữ liệu(HTML) 5 Page - STMicroelectronics |
5 / 13 page DocID026785 Rev 1 5/13 STL19N60DM2 Electrical characteristics 13 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 2 and 7) - TBD - ns tr Voltage rise time - TBD - ns td(off) Turn-off delay time - TBD - ns tf Current fall time - TBD - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD (1) 1. The value is rated according to Rthj-case and limited by package. Source-drain current - 11 A ISDM (1),(2) 2. Pulse width limited by safe operating area Source-drain current (pulsed) - 44 A VSD (3) 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 11A, VGS = 0 - 1.5 V trr (4) 4. Typical values are referring to the test conditions of the same die housed in through hole package. The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost- effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. Reverse recovery time ISD = 11A, di/dt = 100A/µs VDD = 100 V (see Figure 4) -120 ns Qrr (4) Reverse recovery charge - TBD µC IRRM (4) Reverse recovery current - TBD A trr (4) Reverse recovery time ISD = 11 A, di/dt = 100A/µs VDD = 100 V, Tj = 150 °C (see Figure 4) -TBD ns Qrr (4) Reverse recovery charge - TBD µC IRRM (4) Reverse recovery current - TBD A |
Số phần tương tự - STL19N60DM2 |
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Mô tả tương tự - STL19N60DM2 |
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