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STL9N60M2 bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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1 / 16 page This is information on a product in full production. March 2014 DocID025655 Rev 2 1/16 STL9N60M2 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus™ low Q g Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Lower R DS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q g . This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. PowerFLAT™ 5x6 HV 1 2 3 4 AM15540v3 5 6 7 8 12 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) Order code VDS @ TJmax RDS(on) max ID STL9N60M2 650 V 0.86 Ω 4.8 A Table 1. Device summary Order code Marking Package Packaging STL9N60M2 9N60M2 PowerFLAT™ 5x6 HV Tape and reel www.st.com |
Số phần tương tự - STL9N60M2 |
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Mô tả tương tự - STL9N60M2 |
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