STGW80H65DFB-4 datasheet(1/16 Pages) STMICROELECTRONICS

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March 2017

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This is information on a product in full production.

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STGW80H65DFB-4

Trench gate field-stop IGBT, HB series 650 V,

80 A high speed in a TO247-4 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features



VCE(sat) = 1.6 V (typ.) @ IC = 80 A



Maximum junction temperature: TJ = 175 °C



High speed switching series



Minimized tail current



Tight parameter distribution



Safe paralleling



Low thermal resistance



Very fast soft recovery antiparallel diode



Kelvin pin

Applications



Photovoltaic inverter



High frequency converter

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the new HB series

of IGBTs, which represents an optimum

compromise between conduction and switching

loss to maximize the efficiency of any frequency

converter. Furthermore, the slightly positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGW80H65DFB-4

G80H65DFB

TO247-4

Tube

Số phần tương tự - STGW80H65DFB-4

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STGW80H65DFB	978Kb / 18P	High speed switching series November 2016 Rev 8
STMicroelectronics	STGW80H65DFB	1Mb / 22P	Trench gate field-stop IGBT, HB series 650 V, 80 A high speed May 2015 Rev 6

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