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DocID024365 Rev 7
3/19
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
650
V
IC
Continuous collector current at TC = 25 °C
80(1)
1.
Current level is limited by bond wires.
A
IC
Continuous collector current at TC = 100 °C
60
A
ICP
(2)
2.
Pulse width limited by maximum junction temperature.
Pulsed collector current
240
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
80(1)
A
IF
Continuous forward current at TC = 100 °C
60
A
PTOT
Total dissipation at TC = 25 °C
375
W
TSTG
Storage temperature range
- 55 to 150
°C
TJ
Operating junction temperature
- 55 to 175
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
0.4
°C/W
RthJC
Thermal resistance junction-case diode
1.14
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W


Số phần tương tự - STGW60H65DFB

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
STMicroelectronics		 STGW60H65DFB STMICROELECTRONICS-STGW60H65DFB Datasheet
689Kb / 21P		    Trench gate field-stop 650 V, 60 A high speed HB series IGBT
Rev 8 - July 2019
STGW60H65DFB-4 STMICROELECTRONICS-STGW60H65DFB-4 Datasheet
556Kb / 15P		    Trench gate field-stop 650 V, 60 A high speed HB series IGBT
DS11665 - Rev 3 - June 2019
STGW60H65DFB STMICROELECTRONICS-STGW60H65DFB_V01 Datasheet
689Kb / 21P		    Trench gate field-stop 650 V, 60 A high speed HB series IGBT
Rev 8 - July 2019
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