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STGW60H65DFB bảng dữ liệu(PDF) 9 Page - STMicroelectronics

tên linh kiện STGW60H65DFB
Giải thích chi tiết về linh kiện  Low thermal resistance
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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STGW60H65DFB bảng dữ liệu(HTML) 9 Page - STMicroelectronics

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DocID024365 Rev 7
9/19
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics
Figure 20. Reverse recovery current vs. diode
current slope
Figure 21. Reverse recovery time vs. diode
current slope
Irm
(A)
70
30
0
0
di/dt(A/μs)
500
1000
1500
Vr= 400V, IF= 60A
TJ= 175°C
2000
2500
50
60
40
20
10
80
TJ= 25°C
GIPD280820131635FSR
trr
(ns)
150
0
0
di/dt(A/μs)
500
1000
1500
Vr= 400V, IF= 60A
TJ= 175°C
2000
2500
250
200
100
50
TJ= 25°C
300
GIPD280820131643FSR
Figure 22. Reverse recovery charge vs. diode
current slope
Figure 23. Reverse recovery energy vs. diode
current slope
Qrr
(nC)
1500
0
0
di/dt(A/μs)
500
1000
1500
Vr= 400V, IF= 60A
TJ= 175°C
2000
2500
2500
2000
1000
500
TJ= 25°C
3000
3500
4000
GIPD280820131650FSR
Err
(μJ)
300
0
0
di/dt(A/μs)
500
1000
1500
Vr= 400V, IF= 60A
TJ= 175°C
2000
2500
500
400
200
100
TJ= 25°C
600
700
800
GIPD280820131656FSR
Figure 24. Capacitance variations
Figure 25. Collector current vs. switching
frequency
C(pF)
1000
100
10
0.1
VCE(V)
110
10000
Cies
Coes
Cres
100
f = 1 MHz
GIPD280820131518FSR
20
40
60
80
100
110
Ic (A)
f (kHz)
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC = 400V, R =10
,
V
GE = 0/15 V, TJ =175°C)
Tc=80°C
Tc=100 °C
GIPD080120151105FSR


Số phần tương tự - STGW60H65DFB

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