STGW60H60DLFB datasheet(7/17 Pages) STMICROELECTRONICS

tên linh kiện	STGW60H60DLFB

Giải thích chi tiết về linh kiện	Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

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DocID024403 Rev 3

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STGW60H60DLFB, STGWT60H60DLFB

Electrical characteristics

Figure 8. Collector current vs. switching

frequency

Figure 9. Forward bias safe operating area

IC

60

40

20

0

1

f(kHz)

(A)

80

10

100

Rectangular current shape

(duty cycle= 0.5, VCC= 400V, Rg=4.7Ω,

VGE = 0/15 V, TJ = 175 °C)

TC= 80°C

TC= 100°C

120

GIPD021020131506FSR

C = 25°C,

IC

100

10

1

0.1

1

VCE(V)

(A)

10

10 μs

100 μs

1 ms

Single pulse

Tc= 25°C, TJ<= 175°C

VGE= 15V

100

GIPD021020131512FSR

Figure 10. Transfer characteristics

Figure 11. Diode VF vs. forward current

IC

150

100

50

0

7

VGE(V)

(A)

13

200

9

11

TJ=175°C

-40°C

25°C

VCE=10V

GIPD021020131522FSR

J

VF

2

1.6

1.2

0.8

20

IF(A)

(V)

2.4

40

TJ= 175°C

60

80

100

120

TJ= 25°C

TJ= -40°C

GIPD021020131534FSR

Figure 12. Normalized VGE(th) vs junction

temperature

Figure 13. Normalized V(BR)CES vs. junction

temperature

VGE(th)

1.1

1.0

0.6

-50

TJ(°C)

(norm)

0

50

100

150

IC= 1mA

VCE= VGE

0.7

0.8

0.9

GIPD021020131540FSR

V(BR)CES

1.1

1.0

0.9

-50

TJ(°C)

(norm)

0

50

100

150

IC= 2mA

GIPD021020131546FSR

Số phần tương tự - STGW60H60DLFB

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STGW60H65DF	1Mb / 13P	60 A, 650 V field stop trench gate IGBT with very fast diode
	STGW60H65DFB	1Mb / 19P	Low thermal resistance April 2015 Rev 7
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT Rev 8 - July 2019
	STGW60H65DFB-4	556Kb / 15P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT DS11665 - Rev 3 - June 2019
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT Rev 8 - July 2019

More results

Mô tả tương tự - STGW60H60DLFB

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STGB30H60DFB	1Mb / 21P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed October 2015 Rev 2
	STGW30H60DFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed November 2016 Rev 3
	STGW40H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed March 2014 Rev 4
	STGB30H60DLFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed July 2014 Rev 2
	STGW60H65DFB-4	556Kb / 15P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT DS11665 - Rev 3 - June 2019
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT Rev 8 - July 2019
	STGB30H60DLLFBAG	1,009Kb / 17P	Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed October 2016 Rev 1
	STGW60V60DF	1Mb / 16P	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
	STGW60V60DF	1Mb / 20P	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed September 2016
	STGWT40HP65FB	909Kb / 17P	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

More results

STGW60H60DLFB bảng dữ liệu(PDF) 7 Page - STMicroelectronics

STGW60H60DLFB bảng dữ liệu(HTML) 7 Page - STMicroelectronics

Số phần tương tự - STGW60H60DLFB

Mô tả tương tự - STGW60H60DLFB

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