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STGWT40V60DLF bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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DocID024212 Rev 4
3/17
STGW40V60DLF, STGWT40V60DLF
Electrical ratings
17
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
Collector-emitter voltage (V
GE
= 0)
600
V
I
C
Continuous collector current at T
C
= 25 °C
80
A
I
C
Continuous collector current at T
C
= 100 °C
40
A
I
CP
(1)
1.
Pulse width limited by maximum junction temperature
Pulsed collector current
160
A
V
GE
Gate-emitter voltage
±20
V
I
F
Continuous forward current at T
C
= 25 °C
80
A
I
F
Continuous forward current at T
C
= 100 °C
40
A
I
FP(1)
Pulsed forward current
160
A
P
TOT
Total dissipation at T
C
= 25 °C
283
W
T
STG
Storage temperature range
- 55 to 150
°C
T
J
Operating junction temperature
- 55 to 175
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thJC
Thermal resistance junction-case IGBT
0.53
°C/W
R
thJC
Thermal resistance junction-case diode
1.4
°C/W
R
thJA
Thermal resistance junction-ambient
50
°C/W


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