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1 / 18 page This is information on a product in full production. December 2014 DocID026373 Rev 2 1/18 STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Datasheet - production data Figure 1. Internal schematic diagram Features • 10 µs of short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 40 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packing STGW40S120DF3 G40S120DF3 TO-247 Tube STGWA40S120DF3 G40S120DF3 TO-247 long leads Tube www.st.com |
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