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STGW25M120DF3 bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
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This is information on a product in full production.
October 2014
DocID026223 Rev 2
1/18
18
STGW25M120DF3
STGWA25M120DF3
Trench gate field-stop IGBT, M series
1200 V, 25 A low loss
Datasheet
- production data
Figure 1.Internal schematic diagram
Features
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.85 V (typ.) @ IC = 25 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
• Industrial drives
• UPS
• Solar
• Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW25M120DF3
G25M120DF3
TO-247
Tube
STGWA25M120DF3
G25M120DF3
TO-247 long leads
Tube
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