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STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
see Figure 33
-52
-
ns
tr
Current rise time
-
17
-
ns
(di/dt)on
Turn-on current slope
-
1850
-
A/µs
td(off)
Turn-off delay time
-
208
-
ns
tf
Current fall time
-
20
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
-
456
-
µJ
Eoff
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
411
-
µJ
Ets
Total switching losses
-
867
-
µJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 33
-52
-
ns
tr
Current rise time
-
21
-
ns
(di/dt)on
Turn-on current slope
-
1538
-
A/µs
td(off)
Turn-off delay time
-
220
-
ns
tf
Current fall time
-
21
-
ns
Eon
(1)
Turn-on switching losses
-
1330
-
µJ
Eoff
(2)
Turn-off switching losses
-
560
-
µJ
Ets
Total switching losses
-
1890
-
µJ
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 40 A, VR = 400 V,
VGE = 15 V, di/dt=1000 A/µs
see Figure 33
-41
-
ns
Qrr
Reverse recovery charge
-
440
-
nC
Irrm
Reverse recovery current
-
21.6
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-1363
-
A/µs
Err
Reverse recovery energy
-
151
-
µJ
trr
Reverse recovery time
IF = 40 A, VR = 400 V,
VGE = 15 V, di/dt=1000 A/µs
TJ = 175 °C, see Figure 33
-
109
-
ns
Qrr
Reverse recovery charge
-
2400
-
nC
Irrm
Reverse recovery current
-
44.4
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
670
-
A/µs
Err
Reverse recovery energy
-
718
-
µJ


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