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5 / 21 page DocID024402 Rev 8 5/21 STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, see Figure 33 -52 - ns tr Current rise time - 17 - ns (di/dt)on Turn-on current slope - 1850 - A/µs td(off) Turn-off delay time - 208 - ns tf Current fall time - 20 - ns Eon (1) 1. Energy losses include reverse recovery of the diode. Turn-on switching losses - 456 - µJ Eoff (2) 2. Turn-off losses include also the tail of the collector current. Turn-off switching losses - 411 - µJ Ets Total switching losses - 867 - µJ td(on) Turn-on delay time VCE = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 33 -52 - ns tr Current rise time - 21 - ns (di/dt)on Turn-on current slope - 1538 - A/µs td(off) Turn-off delay time - 220 - ns tf Current fall time - 21 - ns Eon (1) Turn-on switching losses - 1330 - µJ Eoff (2) Turn-off switching losses - 560 - µJ Ets Total switching losses - 1890 - µJ Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 40 A, VR = 400 V, VGE = 15 V, di/dt=1000 A/µs see Figure 33 -41 - ns Qrr Reverse recovery charge - 440 - nC Irrm Reverse recovery current - 21.6 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb -1363 - A/µs Err Reverse recovery energy - 151 - µJ trr Reverse recovery time IF = 40 A, VR = 400 V, VGE = 15 V, di/dt=1000 A/µs TJ = 175 °C, see Figure 33 - 109 - ns Qrr Reverse recovery charge - 2400 - nC Irrm Reverse recovery current - 44.4 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 670 - A/µs Err Reverse recovery energy - 718 - µJ |
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