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STGFW30V60DF bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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DocID026149 Rev 1
3/15
STGFW30V60DF
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC
Continuous collector current at TC = 25 °C
60
A
IC
Continuous collector current at TC = 100 °C
30
A
ICP
(1)
1.
Pulse width limited by maximum junction temperature.
Pulsed collector current
120
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
60
A
IF
Continuous forward current at TC = 100 °C
30
A
IFP
(1)
Pulsed forward current
120
A
PTOT
Total dissipation at TC = 25 °C
58
W
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C)
3.5
kV
TSTG
Storage temperature range
- 55 to 150
°C
TJ
Operating junction temperature
- 55 to 175
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
2.6
°C/W
RthJC
Thermal resistance junction-case diode
3.4
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W


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STMicroelectronics
STGFW30V60F STMICROELECTRONICS-STGFW30V60F Datasheet
1Mb / 19P
   Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
April 2014 Rev 4
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Mô tả tương tự - STGFW30V60DF

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STMicroelectronics
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