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STGP3HF60HD bảng dữ liệu(PDF) 5 Page - STMicroelectronics |
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5 / 26 page STGB3HF60HD, STGD3HF60HDT4, STGF3HF60HD, STGP3HF60HD Electrical characteristics DocID17690 Rev 5 5/26 Table 6: Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCC = 400 V, IC = 1.5 A RG = 100 Ω, VGE = 15 V (see Figure 17: " Test circuit for inductive load switching"Figure 19: " Switching waveform") - 11 - ns tr Current rise time - 4 - ns (di/dt)on Turn-on current slope - 285 - A/µs td(on) Turn-on delay time VCC = 400 V, IC = 1.5 A RG = 100 Ω, VGE = 15 V, Tj = 125 °C (see Figure 17: " Test circuit for inductive load switching"Figure 19: " Switching waveform") - 10 - ns tr Current rise time - 5 - ns (di/dt)on Turn-on current slope - 265 - A/µs tr(Voff) Off voltage rise time VCC = 400 V, IC = 1.5 A, RGE = 100 Ω, VGE = 15 V (see Figure 17: " Test circuit for inductive load switching"Figure 19: " Switching waveform") - 26 - ns td(off) Turn-off delay time - 60 - ns tf Current fall time - 50 - ns tr(Voff) Off voltage rise time VCC = 400 V, IC = 1.5 A, RGE = 100 Ω, VGE = 15 V, Tj = 125 °C (see Figure 17: " Test circuit for inductive load switching"Figure 19: " Switching waveform") - 64 - ns td(off) Turn-off delay time - 69 - ns tf Current fall time - 71 - ns Table 7: Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon(1) Turn-on switching energy VCC = 400 V, IC = 1.5 A RG = 100 Ω, VGE = 15 V (see Figure 17: " Test circuit for inductive load switching"Figure 19: " Switching waveform") - 19 - µJ Eoff(2) Ets Turn-off switching energy - 12 - µJ Ets Total switching energy - 31 - µJ Eon(1) Turn-on switching energy VCC = 400 V, IC = 1.5 A RG = 100 Ω, VGE = 15 V, Tj = 125 °C (see Figure 17: " Test circuit for inductive load switching"Figure 19: " Switching waveform") - 38 - µJ Eoff(2) Turn-off switching energy - 35 - µJ Ets Total switching energy - 73 - µJ Notes: (1)Eon is the turn-on energy when a typical diode is used in the test circuit in Figure 17: " Test circuit for inductive load switching". If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C). (2)Turn-off energy include also the tail of the collector current. |
Số phần tương tự - STGP3HF60HD |
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Mô tả tương tự - STGP3HF60HD |
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