STGB5H60DF datasheet(3/30 Pages) STMICROELECTRONICS

tên linh kiện	STGB5H60DF

Giải thích chi tiết về linh kiện	Trench gate field-stop IGBT, H series 600 V, 5 A high speed

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DocID027233 Rev 3

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STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF

Electrical ratings

30

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

D²PAK

TO-220

DPAK

TO-

220FP

Unit

VCES

Collector-emitter voltage (VGE =0)

600

V

IC

Continuous collector current at TC =25°C

10

10(1)

1.

Limited by maximum junction temperature.

A

Continuous collector current at TC = 100 °C

5

5(1)

ICP

(2)

2. Pulse width limited by maximum junction temperature.

Pulsed collector current

20

20(1)

A

VGE

Gate-emitter voltage

±20

V

IF

Continuous forward current TC =25 °C

10

10(1)

A

Continuous forward current at TC =100 °C

5

5(1)

IFP

(2)

Pulsed forward current

20

20(1)

A

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s, TC =25 °C)

2500

V

PTOT

Total dissipation at TC =25°C

88

83

24

W

TSTG

Storage temperature range

- 55 to 150

°C

TJ

Operating junction temperature

- 55 to 175

Table 3. Thermal data

Symbol

Parameter

D²PAK

TO-220

DPAK

TO-

220FP

Unit

RthJC

Thermal resistance junction-case IGBT

1.7

1.8

6.2

°C/W

RthJC

Thermal resistance junction-case diode

4

4.5

7

RthJA

Thermal resistance junction-ambient

62.5

100

62.5

Số phần tương tự - STGB5H60DF

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Mô tả tương tự - STGB5H60DF

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