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STL3NM60N bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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This is information on a product in full production.
November 2014
DocID022795 Rev 2
1/13
STL3NM60N
N-channel 600 V, 1.5
Ω, 2.2 A MDmesh™ II Power MOSFET
in a PowerFLAT™ 3.3 x 3.3 HV package
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Application
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
1
2
3
4
8
7
6
5
5
6
7
8
PowerFLAT™ 3.3x3.3 HV
4
1
2
3
D
G
S
5
6
7
8
Bottom View
Order code
RDS(on) max.
ID
STL3NM60N
1.8
2.2 A
Table 1. Device summary
Order code
Marking
Package
Packaging
STL3NM60N
3NM60N
PowerFLAT™ 3.3 x 3.3 HV
Tape and reel
www.st.com


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