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STIPN1M50-H
Electrical characteristics
DocID030075 Rev 2
7/21
3
Electrical characteristics
TJ = 25 °C unless otherwise specified.
3.1
Inverter part
Table 7: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDSS
Zero-gate voltage drain
current
VDS = 500 V, VCC = 15 V;
VBoot = 15 V
1
mA
V(BR)DSS
Drain-source breakdown
voltage
VCC= Vboot = 15 V, VIN(1) = 0 V,
ID = 1 mA
500
V
RDS(on)
Static drain source turn-
on resistance
VCC = Vboot = 15 V, VIN(1)= 0 - 5 V,
ID = 0.5 A
3.2
3.6
Ω
VSD
Drain-source diode
forward voltage
VIN(1)
= 0 “logic state”, ID = 1 A
0.9
1.6
V
Notes:
(1)Applied among HINx, LINx and GND for x=U,V,W.
Table 8: Inductive load switching time and energy
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ton(1)
Turn-on time
VDD = 300 V,
VCC = Vboot = 15 V,
VIN(2) = 0 - 5 V,
IC = 0.5 A
(see Figure 4: "Switching time
definition")
-
226
-
ns
tc(on)(1)
Crossover time (on)
-
130
-
toff(1)
Turn-off time
-
248
-
tc(off)(1)
Crossover time (off)
-
56
-
trr
Reverse recovery time
-
155
-
Eon
Turn-on switching
energy
-
25
-
µJ
Eoff
Turn-off switching
energy
-
3.8
-
Notes:
(1)tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of
MOSFET itself under the internally given gate driving conditions.
(2)Applied among HINx, LINx and GND for x=U,V,W.


Số phần tương tự - STIPN1M50-H

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