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2 / 8 page NTD25P03L, STD25P03L http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = −250 mA) Temperature Coefficient (Positive) V(BR)DSS −30 −24 V mV/ °C Zero Gate Voltage Drain Current (VDS = −30 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = −30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS −1.0 −100 mA Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) IGSS −100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) Temperature Coefficient (Negative) VGS(th) −1.0 −1.6 4.0 −2.0 V mV/ °C Static Drain−to−Source On−State Resistance (VGS = −5.0 Vdc, ID = −12.5 Adc) (VGS = −5.0 Vdc, ID = −25 Adc) (VGS = −4.0 Vdc, ID = −10 Adc) RDS(on) 0.051 0.056 0.065 0.072 0.080 0.090 W Forward Transconductance (VDS = −8.0 Vdc, ID = −12.5 Adc) gFS 13 Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = −25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss 900 1260 pF Output Capacitance Coss 290 410 Reverse Transfer Capacitance Crss 105 210 SWITCHING CHARACTERISTICS (Notes 3 & 4) Turn−On Delay Time (VDD = −15 Vdc, ID = −25 A, VGS = −5.0 V, RG = 1.3 W) td(on) 9.0 20 ns Rise Time tr 37 75 Turn−Off Delay Time td(off) 15 30 Fall Time tf 16 55 Gate Charge (VDS = −24 Vdc, VGS = −5.0 Vdc, ID = −25 A) QT 15 20 nC Q1 3.0 Q2 9.0 Q3 7.0 BODY−DRAIN DIODE RATINGS (Note 3) Diode Forward On−Voltage (IS = −25 Adc, VGS = 0 V) (IS = −25 Adc, VGS = 0 V, TJ = 125°C) VSD −1.0 −0.9 −1.5 V Reverse Recovery Time (IS = −25 A, VGS = 0 V, dIS/dt = 100 A/ms) trr 35 ns ta 20 tb 14 Reverse Recovery Stored Charge QRR 0.035 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. |
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