STH140N8F7-2 datasheet(4/15 Pages) STMICROELECTRONICS

tên linh kiện	STH140N8F7-2

Giải thích chi tiết về linh kiện	N-channel 80 V, 3.3 m廓 typ., 90 A STripFET??F7 Power MOSFET in a H2PAK-2 package

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Electrical characteristics

STH140N8F7-2

4/15

DocID026821 Rev 2

2

Electrical characteristics

(TCASE = 25 ° C unless otherwise specified)

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0, ID = 250 µA

80

V

IDSS

Zero gate voltage

Drain current

VGS = 0, VDS = 80 V

1

µA

VGS = 0, VDS = 80 V,

TJ=125 ° C

10

µA

IGSS

Gate-source leakage

current

VDS = 0, VGS = ± 20 V

± 100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

4.5

V

RDS(on)

Static drain-source on-resistance

VGS=10 V, ID = 45 A

3.3

4

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 40 V,

f = 1 MHz

-

6340

-

pF

Coss

Output capacitance

-

1195

-

pF

Crss

Reverse transfer capacitance

-

105

-

pF

Qg

Total gate charge

VDD = 40 V, ID = 64 A,

VGS = 10 V

-

96

-

nC

Qgs

Gate-source charge

-

30

-

nC

Qgd

Gate-drain charge

-

26

-

nC

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 40 V, ID = 45 A RG

=4.7 Ω,

VGS = 10 V

-

26

-

ns

tr

Rise time

-

51

-

ns

td(off)

Turn-off-delay time

-

82

-

ns

tf

Fall time

-

44

-

ns

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

90

A

ISDM(1)

Source-drain current (pulsed)

-

360

A

VSD (2)

Forward on voltage

VGS = 0, ISD = 90 A

-

1.2

V

trr

Reverse recovery time

ISD = 64 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 ° C

-

58

ns

Qrr

Reverse recovery charge

-

92

nC

IRRM

Reverse recovery current

-

3.2

A

Notes:

(1)Pulse width is limited by safe operating area

(2)Pulse test: pulse duration = 300 µ s, duty cycle 1.5%

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Inchange Semiconductor ...	STH140N8F7-2	314Kb / 2P	isc N-Channel MOSFET Transistor

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